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GaAs/AlGaAs半导体异质结结构体及其制作方法
Release time:2021-07-23 Hits:
Affilication of Author(s): 中国科学技术大学
Disigner of the Invention: guoguoping,尤杰,caogang,xiaoming,guoguangcan
Patent description: 发明
Application Number: 201410231897.9
Number of Inventors: 6
Service Invention or Not: no
Publication Date: 2014-08-13
Authorization Date: 2017-03-29
First Author: Li Hai Ou