Dr. Dongxue Chen is a research professor at the University of Science and Technology of China.In July 2016, he received his Ph.D. degree in Condensed Matter Physics from National Center for Nanoscience and Technology (NCNST). After graduation, he went to Southern University of Science and Technology of China (SUSTC), Peking University, and Rensselaer Polytechnic Institute (RPI) for postdoctoral and research assistant research. He was supported by the 100-Talent B Talent Introduction Program of Chinese Academy of Sciences, and joined School of Physics/Suzhou Institute for Advanced Research, University of Science and Technology of China, as a dual-appointed special researcher, with his main research interests in the study of physical properties and optoelectronic devices for advanced semiconductors, including semiconductor material preparation, optoelectronic device processing, as well as electronics and spectroscopy research. Up to now, he has published 24 papers and 2 patents, of which 8 papers have been published as first/co-authors in Nature Physics (1), Nature Communications (4), Nano Letters, Nanoscale and other international journals in the past five years.

The group cooperates well with the National Center for Nanoscience and Technology, Southern University of Science and Technology, Shenzhen International Quantum Academy, Peking University, Rensselaer Polytechnic Institute and Carnegie Mellon University. Students with backgrounds in physics, microelectronics, optics, materials and chemistry are welcome to join our group. PhDs in related research fields are welcome to join the group for postdoctoral collaborative research.

Research Directions:

(1) Novel semiconductor physics and optoelectronic devices;

(2) Synthesis of low-dimensional semiconductor materials;

(3) Nanoelectronics and nanospectroscopy;

(4) Novel micro and nanofabrication methods and technologies.

Representative papers: (*corresponding author, #co-first author)

1. 1. Zhen Lian^#, Dongxue Chen^#, Yuze Meng, Xiaotong Chen, Ying Su, Rounak Banerjee, Takashi Taniguchi, Kenji Watanabe, Sefaattin Tongay, Chuanwei Zhang, Yong-Tao Cui* & Su-Fei Shi*, Exciton Superposition across Moiré States in a Semiconducting Moiré Superlattice. Nature Commun. 14, 5042 (2023) https://doi.org/10.1038/s41467-023-40783-z

2. 2. Zhen Lian^#, Dongxue Chen^#, Lei Ma^#, Yuze Meng^#, Ying Su, Li Yan, Xiong Huang, Qiran Wu, Xinyue Chen, Mark Blei, Takashi Taniguchi, Kenji Watanabe, Sefaattin Tongay, Chuanwei Zhang, Yong-Tao Cui* & Su-Fei Shi*，Quadrupolar excitons and hybridized interlayer Mott insulator in a trilayer moiré superlattice. Nature Commun. 14, 4604 (2023) https://doi.org/10.1038/s41467-023-40288-9

3. 3. Chang Liu ^#, Chaojie Ma ^#, Dewei Gong ^#, Chenjun Ma, Dongxue Chen, Chunchun Wu, Mengze Zhao, Zhibin Zhang, Jinming Yun, Fajun Xiao, EnGe Wang, Kaihui Liu*, and Hao Hong*, Greatly Enhanced Raman Scattering of Graphene on Metals by a Boron Nitride Film Covering. J. Phys. Chem. Lett. 14, 24, 5573–5579 (2023) https://doi.org/10.1021/acs.jpclett.3c01074

4. 4. Dongxue Chen ^#, Zhen Lian^#, Xiong Huang^#, Ying Su^# , Mina Rashetnia, Lei Ma, Li Yan, Mark Blei, Li Xiang , Takashi Taniguchi  , Kenji Watanabe, Sefaattin Tongay, Dmitry Smirnov, Zenghui Wang*, Chuanwei Zhang*, Yong-Tao Cui*  and Su-Fei Shi*,  Excitonic Insulator in a Heterojunction Moiré Superlattice. Nature Physics 18, 1171–1176 (2022) https://doi.org/10.1038/s41567-022-01703-y

5. 5. Dongxue Chen^#, Zhen Lian^#, Xiong Huang^#, Ying Su^#, Mina Rashetnia, Li Yan, Mark Blei, Takashi Taniguchi, Kenji Watanabe, Sefaattin Tongay, Zenghui Wang*, Chuanwei Zhang*, Yong-Tao Cui*, Su-Fei Shi*，Tuning Moiré Excitons and Correlated Electronic States through Layer Degree of Freedom. Nature Commun. 13, 4810 (2022) https://doi.org/10.1038/s41467-022-32493-9

6. 6. Shengnan Miao^#, Tianmeng Wang^#, Xiong Huang^#, Dongxue Chen^#, Zhen Lian, Chong Wang, Mark Blei, Takashi Taniguchi, Kenji Watanabe, Sefaattin Tongay, Zenghui Wang*, Di Xiao, Yong-Tao Cui* and Su-Fei Shi*, Strong Interaction between Interlayer Excitons and Correlated Electrons in WSe₂/WS₂ Moiré Superlattice. Nature Commun. 12, 3608 (2021) https://doi.org/10.1038/s41467-021-23732-6

7. 7. Dongxue Chen^#, Ruixi Qiao^#, Xiaozhi Xu, Weikang Dong, Li Wang, Ruisong Ma, Can Liu, Zhihong Zhang, Muhong Wu, Lei Liu, Lihong Bao, Hui-Tian Wang, Peng Gao, Kaihui Liu* and Dapeng Yu*, Sub-10 nm Stable Graphene Quantum Dots Embedded in Boron Nitride. Nanoscale, 11, 4226 (2019) https://doi.org/10.1039/C9NR00412B

8. 8. Dongxue Chen^#, Jianjie Dong^#, Jianji Yang, Yilei Hua, Guixin Li, Chuanfei Guo, Changqing Xie, Ming Liu* and Qian Liu*, Realization of Near-Perfect Absorption in The Whole Reststrahlen Band of SiC, Nanoscale , 10, 9450-9454 (2018) https://doi.org/10.1039/C8NR01706A
   

9. 9. Yujia Liang^#, Yong Xie^#, Dongxue Chen, Chuanfei Guo, Shuai Hou, Tao Wen, Fengyou Yang, Ke Deng, Xiaochun Wu*, Ivan I. Smalyukh*, Qian Liu*, Symmetry Control of Nanorod Superlattice Driven by A Governing Force, Nature Commun., 8, 1410 (2017) https://doi.org/10.1038/s41467-017-01111-4

10. 10. Kai Xu^#, Dongxue Chen^#, Fengyou Yang^#, Zhenxing Wang, Lei Yin, Feng Wang, Ruiqing Cheng, Kaihui Liu, Jie Xiong*, Qian Liu*, and Jun He*, Sub-10 nm Nanopattern Architecture for 2D Material Field-Effect Transistors, Nano Lett., 17 (2), 1065–1070 (2017) https://doi.org/10.1021/acs.nanolett.6b04576