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谢锦林

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一种高电离率氧化物阴极等离子体源及其制备方法

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Affilication of Author(s):中国科学技术大学

Disigner of the Invention:胡广海,金晓丽,袁林,zhangqiaofeng,杨尚川

Patent description:发明

Application Number:201510066212.4

Number of Inventors:6

Service Invention or Not:no

Publication Date:2015-06-24

First Author:xiejinlin

Pre One:一种大面积高电离率氧化物阴极等离子体源