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一种极低温下半导体量子点低噪测量系统
Release time:2021-07-23 Hits:
Affilication of Author(s): 中国科学技术大学
Disigner of the Invention: guoguoping,李海鸥,caogang,xiaoming,guoguangcan
Patent description: 发明
Application Number: 201310125176.5
Number of Inventors: 6
Service Invention or Not: no
Publication Date: 2013-08-07
Authorization Date: 2015-05-27
First Author: shangrunan