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高纯四方相γ－三氧化二锰纳米晶及制备方法
Release time:2021-07-23 Hits:
Affilication of Author(s): 中国科学技术大学
Disigner of the Invention: 樊荣,huyuan,chenxianhui
Patent description: 发明
Application Number: 00135435.3
Number of Inventors: 4
Service Invention or Not: no
Publication Date: 2002-07-24
Authorization Date: 2004-07-28
First Author: guizhou