中国科学技术大学褚家如--中文主页-- 4、Residual stress characterization of polycrystalline 3C-SiC films on Si(100) deposited from methylsilane, Journal of Applied Physics, v106, 2009, 013505

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4、Residual stress characterization of polycrystalline 3C-SiC films on Si(100) deposited from methylsilane, Journal of Applied Physics, v106, 2009, 013505

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上一条：3、Research on the resolution of micro stereo lithography，Chinese Optics Letters, 2009. 7(8): p. 724-727

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