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高纯四方相γ-三氧化二锰纳米晶及制备方法

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Affilication of Author(s):中国科学技术大学

Disigner of the Invention:樊荣,huyuan,chenxianhui

Patent description:发明

Application Number:00135435.3

Number of Inventors:4

Service Invention or Not:no

Publication Date:2002-07-24

Authorization Date:2004-07-28

First Author:guizhou