郭宇桥

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一种二维高导电率氢化NbSe2纳米薄膜、其制备方法和应用

Release time:2021-07-24
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Affilication of Author(s):
中国科学技术大学
Disigner of the Invention:
guoyuqiao,xieyi
Patent description:
发明公开
Application Number:
201910489976.2
Number of Inventors:
3
Service Invention or Not:
no
Publication Date:
2019-10-18
First Author:
wuzhangzheng