一种二维高导电率氢化NbSe2纳米薄膜、其制备方法和应用
Release time:2021-07-24
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- Affilication of Author(s):
- 中国科学技术大学
- Disigner of the Invention:
- guoyuqiao,xieyi
- Patent description:
- 发明公开
- Application Number:
- 201910489976.2
- Number of Inventors:
- 3
- Service Invention or Not:
- no
- Publication Date:
- 2019-10-18
- First Author:
- wuzhangzheng
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