洪义麟
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一种变间距光栅的近场全息-离子束刻蚀制备方法
Release time:2021-07-23 Hits:
Affilication of Author(s): 中国科学技术大学
Disigner of the Invention: 李媛芳,liuzhengkun,chenhuoyao,qiukeqiang,xuxiangdong,hongyilin,fushaojun
Patent description: 发明
Application Number: 201510988326.4
Number of Inventors: 8
Service Invention or Not: no
Publication Date: 2016-03-16
Authorization Date: 2017-11-24
First Author: liuying