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一种单层过渡金属硫属化物薄膜及其制备方法

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Affilication of Author(s):中国科学技术大学

Disigner of the Invention:杨雷,huangjian,伏启

Patent description:发明

Application Number:201410194094.0

Number of Inventors:4

Service Invention or Not:no

Publication Date:2014-08-06

Authorization Date:2015-10-21

First Author:Bin Xiang

Pre One:过渡金属硫属化物纳米线及其制备方法和储能应用