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季恒星

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The Origin of Improved Electrical Double-Layer Capacitance by Inclusion of Topological Defects and Dopants in Graphene for Supercapacitors

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Impact Factor:12.959

DOI number:10.1002/anie.201605926

Journal:ANGEWANDTE CHEMIE-INTERNATIONAL EDITION

Correspondence Author:jihengxing

Document Code:000387024200028

Volume:55

Issue:44

Page Number:13822-13827

ISSN No.:1433-7851

Translation or Not:no

Date of Publication:2016-10-24

Included Journals:SCI

Pre One: Ji, H.; Zhao, X.; Qiao, Z.; Jung, J.; Zhu, Y.; Lu, Y.; Zhang, L. L.; MacDonald, A. H.; Ruoff, R. S. Nature Commun. 2014,5, 3317

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