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季恒星

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Paper Publications

Chemical Vapor Deposition Growth of Bernal-Stacked Bilayer Graphene by Edge-Selective Etching with H2O

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DOI number:10.1021/acs.chemmater.8b03393

Affiliation of Author(s):化学与材料科学学院

Journal:Chemistry of Materials

First Author:Qi Z.

Indexed by:Journal Article

Correspondence Author:Ji H.-X. et al

Translation or Not:no

Date of Publication:2018-01-01

Links to published journals:https://doi.org/10.1021/acs.chemmater.8b03393

Pre One:Rapid Identification of the Layer Number of Large-Area Graphene on Copper

Next One:Origin of the Overpotential for the Oxygen Evolution Reaction on a Well-Defined Graphene Electrode Probed by in Situ Sum Frequency Generation Vibrational Spectroscopy

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