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GaAs/AlGaAs半导体异质结结构栅极电控量子点的制备方法及其测量方法

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  • Affilication of Author(s):中国科学技术大学

  • Disigner of the Invention:guoguoping,Li Hai Ou,caogang,xiaoming,guoguangcan

  • Patent description:发明

  • Application Number:201410229185.3

  • Number of Inventors:6

  • Service Invention or Not:no

  • Publication Date:2014-08-13

  • Authorization Date:2016-08-17

  • First Author:尤杰

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