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GaAs/AlGaAs半导体异质结结构体及其制作方法

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  • Affilication of Author(s):中国科学技术大学

  • Disigner of the Invention:guoguoping,尤杰,caogang,xiaoming,guoguangcan

  • Patent description:发明

  • Application Number:201410231897.9

  • Number of Inventors:6

  • Service Invention or Not:no

  • Publication Date:2014-08-13

  • Authorization Date:2017-03-29

  • First Author:Li Hai Ou

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