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一种电控GaAs/AlGaAs半导体量子点势阱的方法

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  • Affilication of Author(s):中国科学技术大学

  • Disigner of the Invention:陈明博,wangbaochuan,Li Hai Ou,guoguangcan,guoguoping

  • Patent description:发明

  • Application Number:201810265693.5

  • Number of Inventors:6

  • Service Invention or Not:no

  • Publication Date:2018-08-21

  • First Author:caogang

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