一种锰酸镧/半导体金属氧化物复合气敏材料及其制备方法

Affilication of Author(s):中国科学技术大学

Disigner of the Invention:纪磊,张赫,陈冬冬,liuwei,jiangxi

Patent description:发明

Application Number:201510379161.0

Number of Inventors:6

Service Invention or Not:no

Publication Date:2015-11-11

Authorization Date:2017-07-28

First Author:yijianxin