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DOI码：10.1038/ncomms10040

发表刊物：Nature Communications

关键字：SB；CRYSTALLIZATION；DYNAMICS,；ORDER；POWER

摘要：Phase-change memory based on Ti0.4Sb2Te3 material has one order of magnitude faster Set speed and as low as one-fifth of the Reset energy compared with the conventional Ge2Sb2Te5 based device. However, the phase-transition mechanism of the Ti0.4Sb2Te3 material remains inconclusive due to the lack of direct experimental evidence. Here we report a direct atom-by-atom chemical identification of titanium-centered octahedra in crystalline Ti0.4Sb2Te3 material with a state-of-the-art atomic mapping technology. Further, by using soft X-ray absorption spectroscopy and density function theory simulations, we identify in amorphous Ti0.4Sb2Te3 the titanium atoms preferably maintain the octahedral configuration. Our work may pave the way to more thorough understanding and tailoring of the nature of the Ti–Sb–Te material, for promoting the development of dynamic random access memory-like phase-change memory as an emerging storage-class memory to reform current memory hierarchy.

合写作者：Yan Cheng,Mengjiao Xia, Wei Li, Keyuan Ding, Xuefei Feng, Min Zhu, Songlin Feng

第一作者：Feng Rao

通讯作者：Zhitang Song,Xiaosong Liu

论文编号：10040

卷号：6

ISSN号：2041-1723

是否译文：否

发表时间：2015-11-27

发布期刊链接：https://www.nature.com/articles/ncomms10040