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含电流阻挡层的氧化镓半导体制备方法和氧化镓半导体
Release time:2021-07-24 Hits:
Affilication of Author(s): 中国科学技术大学
Disigner of the Invention: 熊文豪,wufeng
Patent description: 发明公开
Application Number: 201910767717.1
Number of Inventors: 3
Service Invention or Not: no
Publication Date: 2019-11-26
First Author: longshibing