宋国锋

Alma Mater:中国科学技术大学

Education Level:With Certificate of Graduation for Doctorate Study

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抑制充电效应的THGEM基材及其制备和检测方法

Release time:2021-07-24 Hits:

Affilication of Author(s):中国科学技术大学

Disigner of the Invention:Song Guofeng,吕游,尚伦霖,张广安,鲁志斌,liujianbei,zhangzhiyong,Ming Shao

Patent description:发明公开

Application Number:201811616624.0

Number of Inventors:9

Service Invention or Not:no

Publication Date:2019-03-19

First Author:周意

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