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一种电控GaAs/AlGaAs半导体量子点势阱的方法

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Affilication of Author(s):中国科学技术大学
Disigner of the Invention:陈明博,wangbaochuan,Li Hai Ou,guoguangcan,guoguoping
Patent description:发明
Application Number:201810265693.5
Number of Inventors:6
Service Invention or Not:no
Publication Date:2018-08-21
First Author:caogang