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吴枫

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氧化镓MOSFET的制备方法

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Affilication of Author(s):中国科学技术大学

Disigner of the Invention:向学强,wufeng

Patent description:发明公开

Application Number:201910879776.8

Number of Inventors:3

Service Invention or Not:no

Publication Date:2019-12-13

First Author:longshibing

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