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碲化镉单晶的低温溶剂热生长方法

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  • Affilication of Author(s):中国科学技术大学

  • Disigner of the Invention:李本侠

  • Patent description:发明

  • Application Number:200610040977.1

  • Number of Inventors:2

  • Service Invention or Not:no

  • Publication Date:2007-02-28

  • Authorization Date:2008-04-09

  • First Author:xieyi


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