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含中间能带的半导体的制备方法及应用

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  • Affilication of Author(s):中国科学技术大学

  • Disigner of the Invention:liangjing,xieyi

  • Patent description:发明公开

  • Application Number:201710671195.6

  • Number of Inventors:3

  • Service Invention or Not:no

  • Publication Date:2019-02-26

  • First Author:Sun Yongfu

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