一种二维高导电率氢化NbSe2纳米薄膜、其制备方法和应用

Affilication of Author(s):中国科学技术大学

Disigner of the Invention:guoyuqiao,xieyi

Patent description:发明公开

Application Number:201910489976.2

Number of Inventors:3

Service Invention or Not:no

Publication Date:2019-10-18

First Author:wuzhangzheng