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一种ⅢA－ⅤA族化合物半导体表面硫钝化方法

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  • Affilication of Author(s):中国科学技术大学

  • Disigner of the Invention:Xu Faqiang,张新夷,xupengshou,余小江

  • Patent description:发明

  • Application Number:98115739.4

  • Number of Inventors:5

  • Service Invention or Not:no

  • Publication Date:2000-01-12

  • Authorization Date:2003-01-22

  • First Author:陆尔东

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