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一种锰酸镧/半导体金属氧化物复合气敏材料及其制备方法

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  • Affilication of Author(s):中国科学技术大学

  • Disigner of the Invention:纪磊,张赫,陈冬冬,liuwei,jiangxi

  • Patent description:发明

  • Application Number:201510379161.0

  • Number of Inventors:6

  • Service Invention or Not:no

  • Publication Date:2015-11-11

  • Authorization Date:2017-07-28

  • First Author:yijianxin

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