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张文华

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Senior engineer  

Paper Publications

Hole Carriers Doping Effect on the Metal-Insulator Transition of N-Incorporated Vanadium Dioxide Thin Films

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DOI number:10.1021/jp502000s

Journal:JOURNAL OF PHYSICAL CHEMISTRY C

First Author:zhangwenhua

Correspondence Author:zhangwenhua

Document Code:000337783900029

Volume:118

Issue:24

Page Number:12837-12844

ISSN No.:1932-7447

Translation or Not:no

Date of Publication:2014-06-19

Included Journals:SCI

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