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一种多量子阱结构;光电器件外延片及光电器件
Release time:2021-07-24 Hits:
Affilication of Author(s): 中国科学技术大学
Disigner of the Invention: longshibing
Patent description: PCT申请
Application Number: PCT/CN2019/108691
Number of Inventors: 2
Service Invention or Not: no
First Author: Haiding Sun