龙世兵
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·Patents
- [1] sunhaiding ,longshibing,一种多量子阱结构;光电器件外延片及光电器件,PCT/CN2019/108691,
- [2] longshibing ,XuGuangwei,熊文豪,向学强,zhaoxiaolong,对氧化镓材料退火的方法,201911035988.4,
- [3] longshibing ,熊文豪,XuGuangwei,向学强,zhaoxiaolong,氧化镓材料表面缺陷修复方法,201911035749.9,
- [4] zhouchenggang ,陈陈,魏珊珊,侯小虎,longshibing,一种精子分选装置,201910923820.0,2019-12-10,
- [5] longshibing ,向学强,wufeng,氧化镓MOSFET的制备方法,201910879776.8,2019-12-13,
- [6] longshibing ,熊文豪,wufeng,形成氧化镓器件隔离的方法以及氧化镓隔离器件,201910767741.5,2019-11-05,
- [7] longshibing ,熊文豪,wufeng,含电流阻挡层的氧化镓半导体制备方法和氧化镓半导体,201910767717.1,2019-11-26,
- [8] longshibing ,wufeng,氧化镓晶体管及其制备方法,201910706502.9,2019-12-13,
- [9] longshibing ,sunhaiding,wufeng,氧化镓基肖特基二极管及其制备方法,201910706501.4,2019-12-10,
- [10] longshibing ,wufeng,氧化镓基日盲探测器及其制备方法,201910706384.1,2019-12-13,