在基金委、科技部和科技委等项目的支持下，面向集成电路学科前沿、国家需求和产业应用，开展了“超宽禁带半导体氧化镓功率器件”研究，从缺陷工程、电场管理和电荷调控三个层面开展了系统深入的研究，取得如下三方面的创新成果。

1）突破了β-Ga₂O₃的点、线、表面缺陷识别/抑制等核心技术。首次证实β-Ga₂O₃中Ga空位是带-3电荷的本征受主，提出低氧分压抑制点缺陷；识别/溯源了线型位错，并通过高温退火将该线型缺陷密度减少至640 cm^-2；证实了β-Ga₂O₃表面O_2p未占据态是界面类施主缺陷态的主要来源，采用350 ℃氮气氛围退火的方式将界面缺陷态密度降低至1.33×10¹¹ eV^–1·cm^–2。

[1] Weibing Hao, Qiming He, Kai Zhou, Guangwei Xu*, Wenhao Xiong, Xuanze Zhou, Guangzhong Jian, Chen Chen, Xiaolong Zhao, Shibing Long*, “Low Defect Density and Small I-V Curve Hysteresis in NiO/Ga₂O₃ pn Diode with a High PFOM of 0.65 GW/cm²,” Applied Physics Letters, vol.118, no.4, pp.043501, 2021.

[2] Qiming He, Weibing Hao, Xuanze Zhou, Yu Li, Kai Zhou, Chen Chen, Wenhao Xiong, Guangzhong Jian, Guangwei Xu*, Xiaolong Zhao, Xiaojun Wu, Junfa Zhu, Shibing Long*, “Over 1 GW/cm² Vertical Ga₂O₃ Schottky Barrier Diodes without Edge Termination,” IEEE Electron Device Letters, vol.43, no.2, pp.264-267, 2021.

[3] Jinyang Liu, Song He, Guangwei Xu*, Weibing Hao, Xuanze Zhou, Zheyang Zheng, Shibing Long, “The characteristics of line-shaped defects and their impact mechanism on device performance in β-Ga₂O₃ Schottky barrier diodes,” Applied Physics Letters, 2025, 126(1): 012111.

[4] Jinyang Liu, Qiuyan Li, Junpeng Wen, Guangwei Xu*, Song He, Minkai Zhang, Zheyang Zheng, Shibing Long, “2kV/16A β-Ga₂O₃ Schottky Barrier Diodes with Surface Killer Defects Reduced by Ar Plasma Treatment,” IEEE Electron Device Letters, 2026, 47(4): 684.

[5] Yuhuan Li, Guangwei Xu*, Shibing Long, Bangjiao Ye, Hongjun Zhang, “Ga vacancies as dominant intrinsic acceptors in Sn-doped β-Ga₂O₃ revealed by positron annihilation spectroscopy,” Physical Review B, 2024, 110(17): 174106.

2）构建了β-Ga₂O₃功率二极管多维度电场调控方案。创新发展了基于p型NiO的异质结型终端结构，提出电荷平衡指导电场横向均匀分布，打破了因同质结终端缺失导致的电场调控受限困境。基于原位退火的自对准干法刻蚀台面终端技术，显著提升了电场纵向均匀分布。进一步，采用横纵结合的调控方案，实现了二极管在-2000 V偏压下漏电水平<1 nA，国际领先的耐压能力（突破2.7 kV）。

[1] Weibing Hao, Feihong Wu, Wenshen Li, Guangwei Xu*, Xuan Xie, Kai Zhou, Wei Guo, Xuanze Zhou, Qiming He, Xiaolong Zhao, Shu Yang, Shibing Long*, “High-performance vertical Ga₂O₃ Schottky barrier diodes featuring P-NiO JTE with adjustable conductivity,” IEEE IEDM, 9-5, 2022.

[2] Weibing Hao, Feihong Wu, Wenshen Li, Guangwei Xu*, Xuan Xie, Kai Zhou, Wei Guo, Xuanze Zhou, Qiming He, Xiaolong Zhao, Shu Yang, Shibing Long, " Improved Vertical β-Ga₂O₃ Schottky Barrier Diodes with Conductivity-Modulated p-NiO Junction Termination Extension," IEEE Transactions on Electron Devices, vol. 70, no. 4, pp. 2129-2134, Feb. 2023.

[3] Zhao Han, Guangzhong Jian, Xuanze Zhou, Qiming He, Weibing Hao, Jinyang Liu, Botong Li, Hong Huang, Qiuyan Li, Xiaolong Zhao, Guangwei Xu*, Shibing Long, "2.7 kV Low Leakage Vertical PtO_x/β-Ga₂O₃ Schottky Barrier Diodes with Self-Aligned Mesa Termination," IEEE Electron Device Letters, vol. 44, no. 10, pp. 1680-1683, Aug. 2023.

[4] Weibing Hao, Guangwei Xu*, Feihong Wu, Zhao Han, Qiuyan Li, Xuanze Zhou, Shu Yang, Shibing Long, “2.7 kV β-Ga₂O₃ Heterojunction Barrier Schottky Diode with Low Leakage Current < 1 mA/cm² Based upon RESURF Effect,” ISPSD, 244, 2024.

[5] Zhao Han, Weibing Hao, Guangwei Xu*, Qin Hu, Zheyang Zheng, Shu Yang, Shibing Long*, “Improved β-Ga₂O₃ Schottky Barrier Diodes Featuring p-NiO Gradual Junction Termination Extension within Mesa Structure,” ISPSD, 232, 2024.

3）开发了新型电荷调控技术—氧气氛围退火和氮离子注入工艺实现电流阻挡层，开创性设计了准反型增强型β-Ga₂O₃垂直槽栅晶体管，国际首次实现β-Ga₂O₃增强型垂直槽栅晶体管，功率品质因子超越硅单极器件理论极限。优化离子注入后的退火激活温度，有效抑制了电流阻挡层的漏电，实现了β-Ga₂O₃垂直槽栅晶体管击穿电压首次突破1 kV，为高性能β-Ga₂O₃晶体管开辟新的技术路线和结构方案。

[1] Xuanze Zhou, Yongjian Ma, Guangwei Xu*, Qi Liu, Jinyang Liu, Qiming He, Xiaolong Zhao, Shibing Long*, “Enhancement-mode β-Ga₂O₃ U-shaped gate trench vertical MOSFET realized by oxygen annealing,” Applied Physics Letters, vol. 121, pp. 223501, 2022.

[2] Qi Liu, Xuanze Zhou*, Man Hoi Wong, Huidong Yao, Jingbo Zhou, Xiaodong Zhang, Guangwei Xu*, Shibing Long, “1-kV β-Ga₂O₃ UMOSFET with Quasi-Inversion Nitrogen-Ion Implanted Channel,” ISPSD, 236, 2024.

[3] Qi Liu, Huidong Yao, Jingbo Zhou, Xuanze Zhou, Xiaodong Zhang, Song Zhang, Man Hoi Wong, Guangwei Xu*, Shu Yang, Shibing Long, “Mitigating the Dominance of Channel Resistance in β-Ga₂O₃ UMOSFETs via Cell Pitch Scaling,” IEEE Electron Device Letters, 2026, 47(3): 486.

[4] Huidong Yao, Xuanze Zhou, Qi Liu, Jingbo Zhou, Man Hoi Wong, Guangwei Xu*, Shu Yang, Shibing Long, “Fast Switching Quasi-Inversion-Channel β-Ga₂O₃ UMOSFET,” IEEE Electron Device Letters, 2026, 47(5): 1009.

[5] Xuanze Zhou, Qi Liu, Xiang Li, Huidong Yao, Shu Yang, Guangwei Xu*, Shibing Long, “Investigation of Bias Temperature Instability in β-Ga₂O₃ UMOSFET with N-ion Implanted Current Blocking Layers,” ISPSD, 289, 2026.