GaAs/AlGaAs半导体异质结结构栅极电控量子点的制备方法及其测量方法
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Affilication of Author(s):中国科学技术大学
Disigner of the Invention:guoguoping,Li Hai Ou,caogang,xiaoming,guoguangcan
Patent description:发明
Application Number:201410229185.3
Number of Inventors:6
Service Invention or Not:no
Publication Date:2014-08-13
Authorization Date:2016-08-17
First Author:尤杰
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