GaAs/AlGaAs半导体异质结结构体及其制作方法

Affilication of Author(s):中国科学技术大学

Disigner of the Invention:guoguoping,尤杰,caogang,xiaoming,guoguangcan

Patent description:发明

Application Number:201410231897.9

Number of Inventors:6

Service Invention or Not:no

Publication Date:2014-08-13

Authorization Date:2017-03-29

First Author:Li Hai Ou