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空穴型半导体电控量子点器件,其制备及使用方法

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  • Affilication of Author(s):中国科学技术大学

  • Disigner of the Invention:袁龙,王柯,张鑫,guoguangcan,guoguoping

  • Patent description:发明

  • Application Number:201710498737.4

  • Number of Inventors:6

  • Service Invention or Not:no

  • Publication Date:2017-09-15

  • First Author:Li Hai Ou


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