空穴型半导体电控量子点器件,其制备及使用方法
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Affilication of Author(s):中国科学技术大学
Disigner of the Invention:袁龙,王柯,张鑫,guoguangcan,guoguoping
Patent description:发明
Application Number:201710498737.4
Number of Inventors:6
Service Invention or Not:no
Publication Date:2017-09-15
First Author:Li Hai Ou
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