Patents

• [31]Li Hai Ou ,袁龙,王柯,张鑫,guoguangcan,guoguoping,空穴型半导体电控量子点器件和装置,201720754015.6,2018-03-02,2018-03-02.
• [32]guoguoping ,yanghui,Li Hai Ou,caogang,guoguangcan,用于临近催化化学气相沉积的装置和方法,201711296987.6,2018-05-18,
• [33]guoguoping ,yanghui,Li Hai Ou,caogang,guoguangcan,用于确定临近催化化学气相沉积中催化剂的热形变的装置和方法,201711295337.X,2018-05-18,
• [34]guoguoping ,yanghui,Li Hai Ou,caogang,xiaoming,guoguangcan,化学气相沉积设备、方法及用途,201711005202.5,2018-03-20,
• [35]Li Hai Ou ,袁龙,王柯,caogang,guoguangcan,guoguoping,空穴型半导体异质结霍尔棒、其制备和使用方法及用途,201710498740.6,2017-09-22,
• [36]guoguoping ,yanghui,Li Hai Ou,caogang,xiaoming,guoguangcan,CVD生长多层异质结的方法和装置,201710440556.6,2017-09-15,
• [37]guoguoping ,yanghui,Li Hai Ou,caogang,xiaoming,guoguangcan,一种用于CVD固态源的挥发装置,201710271043.7,2017-06-20,
• [38]guoguoping ,yanghui,Li Hai Ou,caogang,xiaoming,guoguangcan,一种化学气相沉积系统,201710188533.0,2017-05-17,
• [39]Li Hai Ou ,袁龙,王柯,张鑫,guoguangcan,guoguoping,空穴型半导体电控量子点器件，其制备及使用方法,201710498737.4,2017-09-15,