研究方向：
(超)宽禁带半导体功率与光电子器件与集成：氮化镓、氮化铝、铝镓氮、器件设计与物理机制、微纳加工与制造、电路、可靠性、集成
代表性论文(Google Scholar)：
1. Yuan Qin, Chongde Zhang, Matthew Porter, Xin Yang, Zineng Yang, Hongchang Cui, Han Wang, Jiandong Ye, and Yuhao Zhang. “High-Temperature Enhancement-Mode Ga2O3 Monolithic Bidirectional Switch With >6.5 kV Breakdown Voltage.” IEEE Electron Device Letters, vol. 47, no. 2, pp. 245–248, 2026. Editor's Pick.
2. Yuan Qin, Zineng Yang, Hehe Gong, Xin Yang, Kai Cheng, Shibing Long, Han Wang, and Yuhao Zhang. “Punch-Through Breakdown in High-Voltage GaN Superjunction HEMT.” Applied Physics Letters, 129, 012107, 2026.
3. Yuan Qin, Ming Xiao, Hongchang Cui, Xin Yang, Zineng Yang, Hehe Gong, Kai Liu, Ivan Kravchenko, Florin Udrea, Kai Cheng, Han Wang, and Yuhao Zhang. “5 kV, 20 mΩ·cm² Enhancement-Mode Multi-Channel GaN Monolithic Bidirectional Switch.” 2025 IEEE International Electron Devices Meeting (IEDM), pp. 1–4, 2025. Featured by Semiconductor Today and Compound Semiconductor.
4. Yuan Qin†, Yijin Guo†, Matthew Porter, Ming Xiao, Hehe Gong, Zineng Yang, Daniel Popa, Loizos Efthymiou, Kai Cheng, Zhiqin Chu, Han Wang, Florin Udrea, Yuhao Zhang. “Dynamic Stability and Reliability of Multi-Kilovolt GaN Monolithic Bidirectional HEMT.” 2025 37th International Symposium on Power Semiconductor Devices and ICs (ISPSD), pp. 109-112, 2025.
5. Yijin Guo, Yuan Qin, Matthew Porter, Zineng Yang, Ming Xiao, Yifan Wang, Daniel Popa, Loizos Efthymiou, Chu Cheng, Kai Cheng, Ivan Kravchenko, Linbo Shao, Florin Udrea, and Yuhao Zhang. “10 kV E-Mode GaN HEMT: Physics for Breakdown Voltage Upscaling.” Applied Physics Letters, vol. 127, no. 4, art. 042102, 2025.
6. Yijin Guo†, Yuan Qin†, Ming Xiao†, Matthew Porter, Qihao Song, Daniel Popa, Loizos Efthymiou, Kai Cheng, Ivan Kravchenko, Linbo Shao, Han Wang, Florin Udrea, and Yuhao Zhang. “Enhancement-Mode GaN Monolithic Bidirectional Switch With Breakdown Voltage Over 3.3 kV.” IEEE Electron Device Letters, vol. 46, no. 4, pp. 556–559, 2025. Equal-contribution first author.
7. Yuan Qin, Zineng Yang, Hehe Gong, Alan G. Jacobs, Joseph Spencer, Matthew Porter, Bixuan Wang, Kohei Sasaki, Chia-Hung Lin, Marko Tadjer, and Yuhao Zhang. “10 kV, 250 °C Operational, Enhancement-Mode Ga2O3 JFET With Charge-Balance and Hybrid-Drain Designs.” 2024 IEEE International Electron Devices Meeting (IEDM), pp. 1–4, 2024. IEDM Highlight Paper; featured by Semiconductor Today and PCIM Magazine.
8. Yuan Qin, Matthew Porter, Ming Xiao, Zhonghao Du, Hongming Zhang, Yunwei Ma, Joseph Spencer, Boyan Wang, Qihao Song, Kohei Sasaki, Chia-Hung Lin, Ivan Kravchenko, Dayrl P. Briggs, Dale K. Hensley, Marko Tadjer, Han Wang, and Yuhao Zhang. “2 kV, 0.7 mΩ·cm2 Vertical Ga2O3 Superjunction Schottky Rectifier With Dynamic Robustness.” 2023 IEEE International Electron Devices Meeting (IEDM), pp. 1–4, 2023. Featured by Compound Semiconductor.
9. Yunwei Ma†, Yuan Qin†, Matthew Porter†, Joseph Spencer, Zhonghao Du, Ming Xiao, Boyan Wang, Yifan Wang, Alan G. Jacobs, Han Wang, Marko Tadjer, and Yuhao Zhang. “Wide-Bandgap Nickel Oxide With Tunable Acceptor Concentration for Multidimensional Power Devices.” Advanced Electronic Materials, art. 2300662, 2023. Equal-contribution first author; front cover.
10. Yuan Qin, Ming Xiao, Matthew Porter, Yunwei Ma, Joseph Spencer, Zhonghao Du, Alan G. Jacobs, Kohei Sasaki, Han Wang, Marko Tadjer, and Yuhao Zhang. “10-kV Ga2O3 Charge-Balance Schottky Rectifier Operational at 200 °C.” IEEE Electron Device Letters, vol. 44, no. 8, pp. 1268–1271, 2023. Featured by Semiconductor Today.
11. Yuan Qin, Ming Xiao, Ruizhe Zhang, Qingyun Xie, Tomás Palacios, Boyan Wang, Yunwei Ma, Ivan Kravchenko, Dayrl P. Briggs, Dale K. Hensley, Bernadeta R. Srijanto, and Yuhao Zhang. “1 kV GaN-on-Si Quasi-Vertical Schottky Rectifier.” IEEE Electron Device Letters, vol. 44, no. 7, pp. 1052–1055, 2023.
12. Yuan Qin, Benjamin Albano, Joseph Spencer, James Spencer Lundh, Boyan Wang, Cyril Buttay, Marko J. Tadjer, Christina DiMarino, and Yuhao Zhang. “Thermal Management and Packaging of Wide and Ultra-Wide Bandgap Power Devices: A Review and Perspective.” Journal of Physics D: Applied Physics, vol. 56, art. 093001, 2023. ESI Highly Cited Paper.
13. Yuan Qin†, Zhengpeng Wang†, Kohei Sasaki, Jiandong Ye, and Yuhao Zhang. “Recent Progress of Ga2O3 Power Technology: Large-Area Devices, Packaging and Applications.” Japanese Journal of Applied Physics, vol. 62, art. SF0801, 2023. ESI Highly Cited Paper; 46th JSAP Best Review Paper; 2025 North America Top Cited Paper Award.
14. Yuan Qin†, Congyan Lu†, Zhaoan Yu†, Zhihong Yao, Feihong Wu, Danian Dong, Xiaolong Zhao, Guangwei Xu, Yuhao Zhang, Shibing Long, Ling Li, and Ming Liu. “First Demonstration of High-Sensitivity (NEP < 1 fW·Hz−1/2) Back-Illuminated Active-Matrix Deep-UV Image Sensor by Monolithic Integration of Ga2O3 Photodetectors and Oxide Thin-Film Transistors.” 2022 IEEE Symposium on VLSI Technology and Circuits, pp. 345–346, 2022. Equal-contribution first author.
15. Yuan Qin, Li-Heng Li, Zhaoan Yu, Feihong Wu, Danian Dong, Wei Guo, Zhongfang Zhang, Jun-Hui Yuan, Kan-Hao Xue, Xiangshui Miao, and Shibing Long. “Ultra-High Performance Amorphous Ga2O3 Photodetector Arrays for Solar-Blind Imaging.” Advanced Science, vol. 8, art. 2101106, 2021. ESI Highly Cited Paper.
16. Yuan Qin†, Liheng Li†, Xiaolong Zhao†, Gary S. Tompa, Hang Dong, Guangzhong Jian, Qiming He, Pengju Tan, Xiaohu Hou, Zhongfang Zhang, Shunjie Yu, Haiding Sun, Guangwei Xu, Xiangshui Miao, Kanhao Xue, Shibing Long, and Ming Liu. “Metal–Semiconductor–Metal ε-Ga2O3 Solar-Blind Photodetectors With a Record-High Responsivity Rejection Ratio and Their Gain Mechanism.” ACS Photonics, vol. 7, no. 3, pp. 812–820, 2020. Equal-contribution first author; supplementary cover; ESI Highly Cited Paper.
17. Yuan Qin, Shibing Long, Qiming He, Hang Dong, Guangzhong Jian, Ying Zhang, Xiaohu Hou, Pengju Tan, Zhongfang Zhang, Yingjie Lu, Chongxin Shan, Jianlu Wang, Weida Hu, Hangbing Lv, Qi Liu, and Ming Liu. “Amorphous Gallium Oxide-Based Gate-Tunable High-Performance Thin-Film Phototransistor for Solar-Blind Imaging.” Advanced Electronic Materials, vol. 5, no. 7, art. 1900389, 2019.
18. Yuan Qin†, Hang Dong†, Shibing Long, Qiming He, Guangzhong Jian, Ying Zhang, Xuanze Zhou, Yangtong Yu, Xiaohu Hou, Pengju Tan, Zhongfang Zhang, Qi Liu, Hangbing Lv, and Ming Liu. “Enhancement-Mode β-Ga2O3 Metal-Oxide-Semiconductor Field-Effect Solar-Blind Phototransistor With Ultrahigh Detectivity and Photo-to-Dark Current Ratio.” IEEE Electron Device Letters, vol. 40, no. 5, pp. 742–745, 2019. Equal-contribution first author.
19. Yuan Qin, Haiding Sun, Shibing Long, Gary S. Tompa, Tom Salagaj, Hang Dong, Qiming He, Guangzhong Jian, Qi Liu, Hangbing Lv, and Ming Liu. “High-Performance Metal-Organic Chemical Vapor Deposition-Grown ε-Ga2O3 Solar-Blind Photodetector With Asymmetric Schottky Electrodes.” IEEE Electron Device Letters, vol. 40, no. 9, pp. 1475–1478, 2019. Featured by Compound Semiconductor.
20. Yuan Qin , Yunwei Ma, Ming Xiao , Matthew Porter , Florin Udrea , Han Wang, and Yuhao Zhang. “(Ultra-)Wide-Bandgap Heterogeneous Superjunction: Design, Performance Limit, and Experimental Demonstration.”IEEE Transactions on Electron Devices, vol. 72, no. 1, pp. 119-127, 2025.
21. Hehe Gong, Xin Yang, Boyan Wang, Zichen Zhang, Qingrui Yuchi, Zineng Yang, Matthew Porter, Hongchang Cui, Yuan Qin, Rong Zhang, Han Wang, Dong Dong, Jiandong Ye, Guo-Quan Lu, and Yuhao Zhang. “A Megawatt Ultra-Wide-Bandgap Semiconductor Module for Pulsed Power Electronics.” Nature Communications, 17, 4783, 2026.
22. Xin Yang, Matthew Porter, Yuan Qin, Zineng Yang, Hehe Gong, Liyang Jin, Zichen Xi, Han Wang, Liyan Zhu, Yuhao Zhang, and Linbo Shao. “Cryogenic Neuromorphic Circuits Using Gate-Controlled Negative Differential Resistance in Silicon Carbide.” Nature Communications, 17, 4351, 2026.