闫冬
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闫冬现任中国科学技术大学集成电路学院特任教授,博士生导师。长期从事模拟/功率集成电路研究, 包括集成功率转换(DC/DC、AC/DC), 宽禁带半导体(GaN/SiC)芯片集成技术,电源管理与模拟混合信号系统。在国际权威期刊与会议JSSC、TPEL、ISSCC、VLSI、ESSCIRC等发表学术论文十余篇。
代表成果
1. D. Yan and D. B. Ma, “Online condition monitoring for GaN power devices with integrated dynamic on-resistance full profile scan and offset calibration,” IEEE Transactions on Power Electronics, vol. 39, no. 5, pp. 6215-6224, May 2024.
2. D. Yan and D. B. Ma, “A monolithic GaN power IC with on-chip gate driving, level shifting and temperature sensing achieving direct 48V/1V DC-DC conversion,” IEEE Journal of Solid-State Circuits (JSSC), vol. 57, no. 12, pp. 3865-3876, Dec. 2022. (ISSCC invited submission).
3. D. Yan and D. B. Ma, “A monolithic GaN direct 48V/1V AHB switching power IC with auto-lock auto-break level shifting, self-bootstrapped hybrid gate driving, and on-die temperature sensing,” in IEEE Int. Solid-State Circuits Conf. (ISSCC) Dig. Tech. Papers, San Francisco, USA, Feb. 2022, pp. 232–235.
4. D. Yan and D. B. Ma, “An automotive-use battery-to-load GaN-based switching power converter with anti-aliasing MR-SSM and in-cycle adaptive ZVS techniques,” IEEE Journal of Solid-State Circuits (JSSC), vol. 56, no. 4, pp. 1186-1196, Apr. 2021. (VLSI invited submission).
5. D. Yan and D. B. Ma, “An automotive-use battery-to-load GaN-based power converter with anti-aliasing multi-rate spread-spectrum modulation and in-cycle ZVS switching,” in 2020 Symposium on VLSI Circuits (VLSI), Honolulu, USA, Jun. 2020, pp. 1-2.
6. D. Yan, X. Ke and D. B. Ma, “Direct 48-/1-V GaN-based DC–DC power converter with double step-down architecture and master–slave AO2T control,” IEEE Journal of Solid-State Circuits (JSSC), vol. 55, no. 4, pp. 988-998, Apr. 2020. (VLSI invited submission)
7. D. Yan, X. Ke and D. B. Ma, “A two-phase 2MHz DSD GaN power converter with master-slave AO2T control for direct 48V/1V DC-DC conversion,” in 2019 Symposium on VLSI Circuits (VLSI), Kyoto, Japan, Jun. 2019, pp. C170-C171.
8. D. Yan, X. Ke and D. B. Ma, “Integrated single-stage bi-directional UPS with one-cycle mode switching and active deadtime control for automotive electronics,” in IEEE Energy Conversion Congress and Exposition (ECCE), Portland, USA, Sept. 2018, pp. 2081-2085.
9. L. Du, D. Yan and D. B. Ma, “On-Chip Condition-Adaptive Δ f3 EMI Control for Switching Power ICs,” IEEE Journal of Solid-State Circuits, vol. 58, no. 12, pp. 3481-3491, Dec. 2023. (ISSCC invited submission).
10. L. Du, D. Yan and D. B. Ma, “A Condition-Adaptive △f3-EMI Control GaN Switching Regulator With Modulation Frequency Envelope Tracking For Full-Spectrum Automotive CISPR 25 Compliance,” in IEEE Int. Solid-State Circuits Conf. (ISSCC) Dig. Tech. Papers, San Francisco, CA, USA, 2023, pp. 304-306.
11. X. Ke, D. Yan, J. Sankman et al., “A 3-to-40-V automotive-use GaN driver with active bootstrap balancing and VSW dual-edge dead-time modulation techniques,” IEEE Journal of Solid-State Circuits (JSSC), vol. 56, no. 2, pp. 521-530, Feb. 2021.