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    闫冬

    • 特任教授 博士生导师 硕士生导师
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    • 学历:博士研究生毕业
    • 学位:博士
    • 毕业院校:德州大学达拉斯分校

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    科学研究

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    闫冬现任中国科学技术大学集成电路学院特任教授,博士生导师。长期从事模拟/功率集成电路研究, 包括集成功率转换(DC/DCAC/DC), 宽禁带半导体(GaN/SiC)芯片集成技术,电源管理与模拟混合信号系统。在国际权威期刊与会议JSSCTPELISSCCVLSIESSCIRC等发表学术论文十余篇。


    代表成果

    1. D. Yan, Y. Xie, N. Schemm et al., “Methods and apparatus to monitor power transistors,” U.S. Patent US20250211222A1, Jan. 30th, 2024.

    2. D. Yan and D. B. Ma, “Online condition monitoring for GaN power devices with integrated dynamic on-resistance full profile scan and offset calibration,” IEEE Transactions on Power Electronics, vol. 39, no. 5, pp. 6215-6224, May 2024.

    3. D. Yan and D. B. Ma, “A monolithic GaN power IC with on-chip gate driving, level shifting and temperature sensing achieving direct 48V/1V DC-DC conversion,” IEEE Journal of Solid-State Circuits (JSSC), vol. 57, no. 12, pp. 3865-3876, Dec. 2022. (ISSCC invited submission).

    4. D. Yan and D. B. Ma, “A monolithic GaN direct 48V/1V AHB switching power IC with auto-lock auto-break level shifting, self-bootstrapped hybrid gate driving, and on-die temperature sensing,” in IEEE Int. Solid-State Circuits Conf. (ISSCC) Dig. Tech. Papers, San Francisco, USA, Feb. 2022, pp. 232–235.

    5. D. Yan and D. B. Ma, “An automotive-use battery-to-load GaN-based switching power converter with anti-aliasing MR-SSM and in-cycle adaptive ZVS techniques,” IEEE Journal of Solid-State Circuits (JSSC), vol. 56, no. 4, pp. 1186-1196, Apr. 2021. (VLSI invited submission).

    6. D. Yan and D. B. Ma, “An automotive-use battery-to-load GaN-based power converter with anti-aliasing multi-rate spread-spectrum modulation and in-cycle ZVS switching,” in 2020 Symposium on VLSI Circuits (VLSI), Honolulu, USA, Jun. 2020, pp. 1-2.

    7. D. Yan, X. Ke and D. B. Ma, “Direct 48-/1-V GaN-based DC–DC power converter with double step-down architecture and master–slave AO2T control,” IEEE Journal of Solid-State Circuits (JSSC), vol. 55, no. 4, pp. 988-998, Apr. 2020. (VLSI invited submission)

    8. D. Yan, X. Ke and D. B. Ma, “A two-phase 2MHz DSD GaN power converter with master-slave AO2T control for direct 48V/1V DC-DC conversion,” in 2019 Symposium on VLSI Circuits (VLSI), Kyoto, Japan, Jun. 2019, pp. C170-C171.

    9. D. Yan, X. Ke and D. B. Ma, “Integrated single-stage bi-directional UPS with one-cycle mode switching and active deadtime control for automotive electronics,” in IEEE Energy Conversion Congress and Exposition (ECCE), Portland, USA, Sept. 2018, pp. 2081-2085.

    10. L. Du, D. Yan and D. B. Ma, “On-Chip Condition-Adaptive Δ f3 EMI Control for Switching Power ICs,” IEEE Journal of Solid-State Circuits, vol. 58, no. 12, pp. 3481-3491, Dec. 2023. (ISSCC invited submission).

    11. L. Du, D. Yan and D. B. Ma, “A Condition-Adaptive f3-EMI Control GaN Switching Regulator With Modulation Frequency Envelope Tracking For Full-Spectrum Automotive CISPR 25 Compliance,” in IEEE Int. Solid-State Circuits Conf. (ISSCC) Dig. Tech. Papers, San Francisco, CA, USA, 2023, pp. 304-306.

    12. X. Ke, D. Yan, J. Sankman et al., “A 3-to-40-V automotive-use GaN driver with active bootstrap balancing and VSW dual-edge dead-time modulation techniques,” IEEE Journal of Solid-State Circuits (JSSC), vol. 56, no. 2, pp. 521-530, Feb. 2021.