29. S. Han, S. Yang*, and K. Sheng, "Fluorine-implanted termination for vertical GaN Schottky rectifier with high blocking voltage and low forward voltage drop," IEEE Electron Device Lett., vol. 40, no. 7, pp. 1040–1043, Jul. 2019
点击次数：
是否译文：否
上一条： 28. Y. Liu, S. Yang*, S. Han, and K. Sheng, "Investigation of surge current capability of GaN E-HEMTs in the third quadrant: the impact of p-GaN contact," IEEE J. Emerg. Sel. Topics Power Electron., vol. 7, no. 3, pp. 1465-1474, Sep. 2019
下一条： 30. S. Han, S. Yang*, R. Li, X. Wu, and K. Sheng, "Current-collapse-free and fast reverse recovery performance in vertical GaN-on-GaN Schottky barrier diode," IEEE Trans. Power Electron., vol. 36, no. 6, pp. 5012-5018, Jun. 2019. (Featured in Compound Semiconductor and Semiconductor Today)