10. S. Yang*, Z. Tang, K. Wong, Y. Lin, C. Liu, Y. Lu, S. Huang, and K. J. Chen, “High-quality interface in Al2O3/GaN/AlGaN/GaN MIS-structures with in situ pregate plasma nitridation,” IEEE Electron Device Lett., vol. 34, no. 12, pp. 1497–1499, Dec. 2013. (ESI Highly Cited Paper; Featured in Compound Semiconductor and Semiconductor Today)
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上一条： 9. S. Yang*, C. Zhou, S. Han, J. Wei, K. Sheng, and K. J. Chen, “Impact of substrate bias polarity on buffer-related current collapse in AlGaN/GaN-on-Si power devices,” IEEE Trans. Electron Devices, vol. 64, no. 12, pp. 5048–5056, Dec. 2017
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