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半导体栅极电控量子点及其制备方法

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  • Affilication of Author(s):中国科学技术大学

  • Disigner of the Invention:胡睿梓,王柯,张鑫,luogang,guoguoping

  • Patent description:发明公开

  • Application Number:201910366140.3

  • Number of Inventors:6

  • Service Invention or Not:no

  • Publication Date:2019-08-16

  • First Author:Li Hai Ou

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