中国科学技术大学温晓镭--中文主页-- Defect Engineering in Multilayer h-BN Based RRAM by Localized Helium Ion Irradiation

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Defect Engineering in Multilayer h-BN Based RRAM by Localized Helium Ion Irradiation

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发表刊物：IEEE Electron Device Letters
论文类型：期刊论文
文献类型：J
是否译文：否
发表时间：2024-02-23

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