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教授
- 教师拼音名称：xuxiaoliang
- 电子邮箱：5128bd117a43ddd6a37fa99c910029d0780937d1f8ae09150bdf3bf2ac340dda2b5bfa6e309180ba72bc6ec9b4aad68041bf840c0bbd3c1ec33406cfe6d9e0864638ddd25648b2d5db0240e2d27c495103e7860a1b56f100a49d1f4dd9b6228b3040c0ca6580e2a91d22f3d8d37e3a49eaf187f70cb5b40c7133e6df223aa676
- 联系方式：63607574
- 学位：博士
访问量：
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[11]Hao L Y, Hou B H and Xu X L, Cathodoluminescence of silicon in the visible-ultraviolet region.Phys.Rev.B.57(20),12841(1998).(SCI,f=3.5).
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[12]S.Fung,Y W.Zhao,X L Xu and X D Chen, Compensation defects in annealed undoped liquid encapsulated Czochralsky InP. J.Appl.Phys.86(2),951(1999). (SCI, f=2.43).
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[13]S.Fung, Y W.Zhao, and X L Xu, Thermally induced type conversion in n-type InP. J.Appl.Phys.86(4),2361(1999).(SCI, f=2.43).
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[14]X L Xu, C D Beling, S Fung and Y W Zhao, Formation mechanism of a degenerate thin layer at the interface of GaN and sapphire. Appl.Phys.Lett.76(2), 152(2000). (SCI, f=4.30).
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[15]许小亮，施朝淑。 纳米微晶结构ZnO及其紫外激光。物理学进展。(20)4，356(2000)（核心，为SCI定期收录）.
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[16]许小亮，施朝淑。 GaN中的缺陷与杂质。物理学进展。(21)1，1（2001）（核心，为SCI定期收录）.
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[17]X. L. Xu, H. T. Liu and C. S. Shi, “Compansation and residual donors in metalorganic chemical vapor deposition as-grown GaN”.J.Appl.Phys. 90(11), 1095(2001) (SCI, f=2.43).
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[18]X. L. Xu, C.X.Guo, C.S.Shi, “Annealing effect for surface morphology and luminescence of ZnO film on silicon”. Chemical Phys.Lett.364,57 (2002) (SCI,f=2.65).
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[19]X. L. Xu et. al. “Photo-stimulated current spectroscopy and it’s application in Al+ implantation-induced deep traps in GaN”. Thin Solid Films 416, 294 (2002) (SCI,f=1.54).
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[20]Xiaoliang Xu, Pei Wang, Zemin Qi et al, “Formation mechanism of Zn2SiO4 crystal and amorphous SiO2 in ZnO / Si system”, J.Phys: Conden.Mat. 15, L607-613(2003) (SCI, f=2.045).
