Yang Shu
- Professor
- Supervisor of Doctorate Candidates
- Supervisor of Master's Candidates
- Name (Pinyin):Yang Shu
- Business Address:School of Microelectronics, University of Science and Technology of China 242 Huangshan Road, Hefei, 230026 China
- Degree:Dr
- Professional Title:Professor
- Alma Mater:The Hong Kong University of Science and Technology
- Teacher College:School of Microelectronics
- Discipline:Electronic Science and Technology
Contact Information
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- Scientific Research
Research Field
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Paper Publications
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- 1. (invited) S. Yang*, S. Han, K. Sheng, and K. J. Chen,"Dynamic on-resistance in GaN power devices: Mechanisms, characterizations and modeling," IEEE J. Emerg. Sel. Topics Power Electron., vol. 7, no. 3, pp. 1425-1439, Sep. 2019.
- 2. S.Han, S.Yang*, and K. Sheng,“Conductivity modulation in vertical GaN PiN diode: Evidence and impact,” IEEE Electron Device Lett., Vol. 42, no. 3, pp.300-303, Mar. 2021. (Featured in CompoundSemiconductor).
- 3. S. Li, K. Sheng, and S. Yang*, "Temperature-Dependent Dynamic Ron of GaN E-HEMTs: The Impact of p-GaN Drain," IEEE Trans. Electron Devices, vol. 70, no. 7, pp. 3754-3761, July 2023.
- 4. S. Han, S. Yang*, R. Li, X. Wu, and K. Sheng, “Current-collapse-free and fast reverse recovery performance in vertical GaN-on-GaN Schottky barrier diode,” IEEE Trans. Power Electron., vol. 36, no. 6., pp. 5012-5018, Jun. 2019. (Featured in Compound Semiconductor and Semiconductor Today).
- 5. S. Han, S. Yang*, and K. Sheng, “High-voltage and high-ION/IOFF vertical GaN-on-GaN Schottky barrier diode with nitridation-based termination,” IEEE Electron Device Lett., vol. 39, no. 4, pp. 572–575, Apr. 2018. (Featured in Compound Semiconductor and Semiconductor Today).
Patents
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Published Books
- S.Yang and S.Han, "GaN Metal-Insulator-Semiconductor Field-Effect Transistors,"in Modern Power Electronic Devices: Physics, applications, and reliability, The Institution of Engineering and Technology(IET), ISBN: 978-1-78561-917-5. Chapter 9, 2020.[Monograph].Institution of Engineering and Technology,
- K. J. Chen and S. Yang, "Recent Progress in GaN-on-Si HEMT," in Handbook of GaN Semiconductor Materials and Devices, CRC Press, Taylor & Francis, ISBN: 978-1-4987-4713-4. Chapter 11, 2017.[Monograph].Taylor & Francis,