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叶邦角
( 教授 )
的个人主页 http://faculty.ustc.edu.cn/yebangjiao/zh_CN/index.htm
教授
电子邮箱:
47e86508a2b1cbd97a0dbe6feeae01ca591a7fac64bf9402dd76a41bd4758b3676bb74694c3829f967ccf0e4737444192c214c486cb84979b9aded86c1126e821eb6577f7f9269070d59ae573f1881b7733fe2e128076a4721acd9dd00fed9296832002884dc33a485bb331f2425de60f9418f5f7e04e697af98e220372476cf
联系方式:
0551-63606914
学位:
博士
论文成果
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论文成果
[1]
叶邦角.Simulation of positron backscattering and implantation profiles using Geant4 code.CHINESE PHYSICS B,2015,24(10):
[2]
叶邦角.Exploring positron characteristics utilizing two new positron-electron correlation schemes based on multiple electronic structure calculation methods.CHINESE PHYSICS B,2015,24(10):
[3]
叶邦角.A novel source of MeV positron bunches driven by energetic protons for PAS application.NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT,2014,763184-189.
[4]
叶邦角.Anylasis and comparison of several methods for calculation of positron bulk lifetime in perfect crystals.ACTA PHYSICA SINICA,2014,63(21):
[5]
叶邦角.Room-temperature ferromagnetism observed in C-/N-/O-implanted MgO single crystals.CHEMICAL PHYSICS LETTERS,2013,556237-241.
[6]
叶邦角.A comparative study on ferromagnetic C/O-implanted GaN films by positron annihilation spectroscopy.NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS,2016,375107-111.
[7]
叶邦角.The identification of defect structures for oxygen pressure dependent VO2 crystal films.APPLIED SURFACE SCIENCE,2014,321464-468.
[8]
叶邦角.Structural and magnetic properties in Mn-doped ZnO films prepared by pulsed-laser deposition.APPLIED SURFACE SCIENCE,2014,28942-46.
[9]
叶邦角.Annealing temperature effects on the magnetic properties and induced defects in C/N/O implanted MgO.NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS,2013,29729-34.
[10]
叶邦角.A new muon-pion collection and transport system design using superconducting solenoids based on CSNS.CHINESE PHYSICS C,2016,40(5):
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