首页
科学研究
研究领域
论文成果
专利
著作成果
科研项目
教学研究
教学资源
授课信息
教学成果
获奖信息
招生信息
学生信息
我的相册
教师博客
扫描手机二维码
欢迎您的访问
您是第
位访客
开通时间:
.
.
最后更新时间:
.
.
登录
English
|
手机版
温晓镭
( 高级工程师 )
的个人主页 http://faculty.ustc.edu.cn/wenxiaolei/zh_CN/index.htm
高级工程师
电子邮箱:
3141f683834097620c7f1754cb6ed2854f9deecd91567e3dff90670d0e90c93fc8013079da74fac37f0caba37327803c52da6921ea0aa3fa4a04706c1345c9d3f18f142c855fcc4c96531fc6a458cba02b14eac0c44fde012a42b15062d52a340c6aa132de57e8e7505ebeb861f8fe0da1d09b101b87c69193961978e0d5b2c2
学位:
博士
毕业院校:
中国科学技术大学
学科:
核科学与技术
光学工程
物理学
论文成果
当前位置:
中文主页
>>
科学研究
>>
论文成果
[1]
Robust single modified divacancy color centers in 4H-SiC under resonant excitation.[J].Nature Communications,2024,
[2]
Enhanced and directional fluorescence emission regulated by dual resonant surface modes.[J].Optics Letters,2025,
[3]
Defect Engineering in Multilayer h-BN Based RRAM by Localized Helium Ion Irradiation.[J].IEEE Electron Device Letters,2024,
[4]
Helium Ion-Assisted Wet Etching of Silicon Carbide with Extremely Low Roughness for High-Quality Nanofabrication..[J].Small Methods,2024,8(5):2301364.
[5]
Enhancement of silicon sub-bandgap photodetection by helium-ion implantation.[J].Frontiers of Optoelectronics,2023,
[6]
Versatile Approach of Silicon Nanofabrication without Resists: Helium Ion-Bombardment Enhanced Etching..[J].Nanomaterials,2022,12(19):3269.
[7]
Maskless Generation of Single Silicon Vacancy Arrays in Silicon Carbide by a Focused He+ Ion Beam.[J].ACS Photonics,2022,
[8]
3-D Nanofabrication of Silicon and Nanostructure Fine-Tuning via Helium Ion Implantation..Advanced Materials Interface,2022,9(10):2101643.
[9]
High throughput optical lithography by scanning a massive array of bowtie aperture antennas at near-field..[J].Scientific Reports,2015,
[10]
Optical nanolithography with lambda/15 resolution using bowtie aperture array..[J].Applied Physics A-Materials Science & Processing,2014,
共10条 1/1
首页
上页
下页
尾页
版权所有 ©2020 中国科学技术大学
地址:安徽省合肥市金寨路 96 号,邮政编码:230026