Shu Yang
- Professor
- Name (Pinyin):Shu Yang
- Business Address:School of Microelectronics, University of Science and Technology of China 242 Huangshan Road, Hefei, 230026 China
- Degree:Dr
- Professional Title:Professor
- Alma Mater:The Hong Kong University of Science and Technology
- Teacher College:School of Microelectronics
- Discipline:Electronic Science and Technology
Contact Information
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- Paper Publications
- 11. Y. Yin, X. Liu, X. Tang, X. Xie, H. Wang, C. Zhao, S. Yang*, "Mechanism of frequency-dependent gate breakdown in p-GaN/AlGaN/GaN HEMTs," Appl. Phys. Lett., vol. 125, no. 17, Oct. 2024, Art. no. 173506.
- 12. J. Chang, Y. Yin, J. Du, H. Wang. H. Li, C. Zhao, H. Li, C. Hu, W. Cao, X. Tang*, S. Yang*, "On-Chip Integrated High-Sensitivity Temperature Sensor Based on p-GaN/AlGaN/GaN Heterostructure," IEEE Electron Device Lett., vol. 44, no. 4, pp. 594-597, Apr. 2023.
- 13. S. Li, K. Sheng, and S. Yang*, "Temperature-Dependent Dynamic Ron of GaN E-HEMTs: The Impact of p-GaN Drain," IEEE Trans. Electron Devices, vol. 70, no. 7, pp. 3754-3761, July 2023.
- 14. S. Li, S. Yang*, Z. Han, Z. Hao, K. Sheng, G. Xu, "Vertical GaN Schottky Barrier Diode With Hybrid P-NiO Junction Termination Extension," IEEE J. Electron Devices Soc., vol. 12, pp. 548-554, Jul. 2024.
- 15. Y. Li, S. Yang*, F. Ji, X. Tang, K. Sheng, "Investigation of conductivity modulation in vertical GaN-on-GaN PiN diode under high current density," Appl. Phys. Lett., vol. 122, no. 9, Feb. 2023, Art. no. 092102.
- 16. Y. Li, S. Yang*, K. Liu, K. Cheng, K. Sheng, B. Shen, "Fully-Vertical GaN-on-SiC Schottky Barrier Diode: Role of Conductive Buffer Structure," IEEE Trans. Electron Devices, vol. 70, no. 2, pp. 619-626, Feb. 2023.
- 17. C. Sun, Z. Niu, S. Yang*, "Dynamic Gate Capacitance Model for Switching Transient Analysis in P-GaN Gate HEMTs," 35th Int. Symp. on Power Semiconductor Devices and ICs (ISPSD), Hong Kong, May 28-Jun 01, 2023.
- 18. J. Du, S. Yang*, G. Xu, S. Long, "Surge Current Ruggedness in Vertical GaN-on-GaN PiN Diode: Role of Conductivity Modulation," 35th Int. Symp. on Power Semiconductor Devices and ICs (ISPSD), Hong Kong, May 28-Jun 01, 2023.
- 19. H. Wang, Y. Yin, F. Ji, J. Du, H. Li, C. Zhao, B. Li, C. Hu, W. Cao, X. Tang, S. Yang*, "Enhanced gate breakdown and electroluminescence in p-GaN gate HEMTs under pulsed switching conditions," 35th Int. Symp. on Power Semiconductor Devices and ICs (ISPSD), Hong Kong, May 28-Jun 01, 2023.
- 20. Y. Li, S. Yang*, K. Liu, K. Cheng, K. Sheng, B. Shen, "Low ON-Resistance Fully-Vertical GaN-on-SiC Schottky Barrier Diode with Conductive Buffer Layer," 34th Int. Symp. on Power Semiconductor Devices and ICs (ISPSD), Vancouver, Canada, May 22-25, 2022.