Yang Shu
- Professor
- Supervisor of Doctorate Candidates
- Supervisor of Master's Candidates
- Name (Pinyin):Yang Shu
- Business Address:School of Microelectronics, University of Science and Technology of China 242 Huangshan Road, Hefei, 230026 China
- Degree:Dr
- Professional Title:Professor
- Alma Mater:The Hong Kong University of Science and Technology
- Teacher College:School of Microelectronics
- Discipline:Electronic Science and Technology
Contact Information
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- Paper Publications
- 11. S. Han, S. Yang*, and K. Sheng, “Fluorine-implanted termination for vertical GaN Schottky rectifier with high blocking voltage and low forward voltage drop,” IEEE Electron Device Lett., vol. 40, no. 7, pp. 1040–1043, Jul. 2019.
- 12. S. Yang*, S. Han, R. Li, and K. Sheng, “1 kV/1.3 mΩ·cm2 vertical GaN-on-GaN Schottky barrier diodes with high switching performance,” 30th Int. Symp. on Power Semiconductor Devices and ICs (ISPSD), Chicago, USA, May 13-17, 2018. (IEEE ISPSD Charitat Young Researcher Award).
- 13. S. Yang*, C. Zhou, S. Han, J. Wei, K. Sheng, and K. J. Chen, “Impact of substrate bias polarity on buffer-related current collapse in AlGaN/GaN-on-Si power devices,” IEEE Trans. Electron Devices, vol. 64, no. 12, pp. 5048–5056, Dec. 2017.
- 14. S. Yang*, Z. Tang, K. Wong, Y. Lin, C. Liu, Y. Lu, S. Huang, and K. J. Chen, “High-quality interface in Al2O3/GaN/AlGaN/GaN MIS-structures with in situ pregate plasma nitridation,” IEEE Electron Device Lett., vol. 34, no. 12, pp. 1497–1499, Dec. 2013. (ESI Highly Cited Paper; Featured in Compound Semiconductor and Semiconductor Today).
- 15. S. Yang*, S. Liu, Y. Lu, C. Liu, and K. J. Chen, “AC-capacitance techniques for interface trap analysis in GaN-based buried-channel MIS-HEMTs,” IEEE Trans. Electron Devices, vol. 62, no. 6, pp. 1870–1878, June 2015.
- 16. S. Yang*, Y. Lu, H. Wang, S. Liu, C. Liu, and K. J. Chen, “Dynamic gate stress-induced VTH shift and its impact on dynamic RON in GaN MIS-HEMTs,” IEEE Electron Device Lett., vol. 37, no. 2, pp. 157–160, Feb. 2016.
- 17. S. Yang*, et al., “Thermally induced threshold voltage instability of III-nitride MIS-HEMTs and MOSC-HEMTs: underlying mechanisms and optimization schemes,” 2014 IEEE International Electron Devices Meeting (IEDM’14), San Francisco, USA, Dec. 15-17, 2014.