Shu Yang
- Professor
- Name (Pinyin):Shu Yang
- Business Address:School of Microelectronics, University of Science and Technology of China 242 Huangshan Road, Hefei, 230026 China
- Degree:Dr
- Professional Title:Professor
- Alma Mater:The Hong Kong University of Science and Technology
- Teacher College:School of Microelectronics
- Discipline:Electronic Science and Technology
Contact Information
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- Paper Publications
- 21. S.Han, S.Yang*, and K. Sheng,"Conductivity modulation in vertical GaN PiN diode: Evidence and impact," IEEE Electron Device Lett., Vol. 42, no. 3, pp.300-303, Mar. 2021. (Featured in CompoundSemiconductor).
- 22. H. Zhang, Y. Gan, S. Yang*, K. Sheng, P. Wang, "Low limit of detection of the AlGaN/GaN-based sensor by the Kelvin connection detection technique," Microsyst. Nanoeng., Vol. 7, no. 1, Jul. 2021, Art. no. 51.
- 23. H. Zhang, S. Yang*, K. Sheng, "The Safe Operating Area of AlGaN/GaN-Based Sensor," IEEE Sens. J., vol. 61, no. 5, pp. 6241-6247, Mar. 2021.
- 24. S. Han, S. Yang*, K. Sheng, "Negative Dynamic RON in Vertical GaN PiN Diode: The Impact of Conductivity Modulation," 32th Int. Symp. on Power Semiconductor Devices and ICs (ISPSD), Vienna, Austria, Sep 13-18, 2020.
- 25. Q. Bao, S. Yang*, K. Sheng, "UIS Withstanding Capability of GaN E-HEMTs with Schottky and Ohmic p-GaN contact," 32th Int. Symp. on Power Semiconductor Devices and ICs (ISPSD), Vienna, Austria, Sep 13-18, 2020.
- 26. S. Li, S. Yang*, S. Han, K. Sheng, "Investigation of Temperature-Dependent Dynamic RON of GaN HEMT with Hybrid-Drain under Hard and Soft Switching," 32th Int. Symp. on Power Semiconductor Devices and ICs (ISPSD), Vienna, Austria, Sep 13-18, 2020.
- 27. (invited) S. Yang*, S. Han, K. Sheng, and K. J. Chen,"Dynamic on-resistance in GaN power devices: Mechanisms, characterizations and modeling," IEEE J. Emerg. Sel. Topics Power Electron., vol. 7, no. 3, pp. 1425-1439, Sep. 2019.
- 28. Y. Liu, S. Yang*, S. Han, and K. Sheng, "Investigation of surge current capability of GaN E-HEMTs in the third quadrant: the impact of p-GaN contact," IEEE J. Emerg. Sel. Topics Power Electron., vol. 7, no. 3, pp. 1465-1474, Sep. 2019.
- 29. S. Han, S. Yang*, and K. Sheng, "Fluorine-implanted termination for vertical GaN Schottky rectifier with high blocking voltage and low forward voltage drop," IEEE Electron Device Lett., vol. 40, no. 7, pp. 1040–1043, Jul. 2019.
- 30. S. Han, S. Yang*, R. Li, X. Wu, and K. Sheng, "Current-collapse-free and fast reverse recovery performance in vertical GaN-on-GaN Schottky barrier diode," IEEE Trans. Power Electron., vol. 36, no. 6, pp. 5012-5018, Jun. 2019. (Featured in Compound Semiconductor and Semiconductor Today).