Shu Yang
- Professor
- Name (Pinyin):Shu Yang
- Business Address:School of Microelectronics, University of Science and Technology of China 242 Huangshan Road, Hefei, 230026 China
- Degree:Dr
- Professional Title:Professor
- Alma Mater:The Hong Kong University of Science and Technology
- Teacher College:School of Microelectronics
- Discipline:Electronic Science and Technology
Contact Information
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- Paper Publications
- 21. C. Sun, Z. Niu, S. Yang*, "Dynamic Gate Capacitance Model for Switching Transient Analysis in P-GaN Gate HEMTs," 35th Int. Symp. on Power Semiconductor Devices and ICs (ISPSD), Hong Kong, May 28-Jun 01, 2023.
- 22. J. Du, S. Yang*, G. Xu, S. Long, "Surge Current Ruggedness in Vertical GaN-on-GaN PiN Diode: Role of Conductivity Modulation," 35th Int. Symp. on Power Semiconductor Devices and ICs (ISPSD), Hong Kong, May 28-Jun 01, 2023.
- 23. H. Wang, Y. Yin, F. Ji, J. Du, H. Li, C. Zhao, B. Li, C. Hu, W. Cao, X. Tang*, S. Yang*, "Enhanced gate breakdown and electroluminescence in p-GaN gate HEMTs under pulsed switching conditions," 35th Int. Symp. on Power Semiconductor Devices and ICs (ISPSD), Hong Kong, May 28-Jun 01, 2023.
- 24. Y. Li, S. Yang*, K. Liu, K. Cheng, K. Sheng, B. Shen, "Low ON-Resistance Fully-Vertical GaN-on-SiC Schottky Barrier Diode with Conductive Buffer Layer," 34th Int. Symp. on Power Semiconductor Devices and ICs (ISPSD), Vancouver, Canada, May 22-25, 2022.
- 25. S. Han, S. Yang*, and K. Sheng,"Conductivity modulation in vertical GaN PiN diode: Evidence and impact," IEEE Electron Device Lett., Vol. 42, no. 3, pp.300-303, Mar. 2021. (Featured in CompoundSemiconductor).
- 26. H. Zhang, Y. Gan, S. Yang*, K. Sheng, P. Wang, "Low limit of detection of the AlGaN/GaN-based sensor by the Kelvin connection detection technique," Microsyst. Nanoeng., vol. 7, no. 1, Art. no. 51, Jul. 2021.
- 27. H. Zhang, S. Yang*, K. Sheng, "The Safe Operating Area of AlGaN/GaN-Based Sensor," IEEE Sensors J., vol. 61, no. 5, pp. 6241-6247, Mar. 2021.
- 28. S. Han, S. Yang*, K. Sheng, "Negative Dynamic RON in Vertical GaN PiN Diode: The Impact of Conductivity Modulation," 32th Int. Symp. on Power Semiconductor Devices and ICs (ISPSD), Vienna, Austria, Sep 13-18, 2020.
- 29. Q. Bao, S. Yang*, K. Sheng, "UIS Withstanding Capability of GaN E-HEMTs with Schottky and Ohmic p-GaN contact," 32th Int. Symp. on Power Semiconductor Devices and ICs (ISPSD), Vienna, Austria, Sep 13-18, 2020.
- 30. S. Li, S. Yang*, S. Han, K. Sheng, "Investigation of Temperature-Dependent Dynamic RON of GaN HEMT with Hybrid-Drain under Hard and Soft Switching," 32th Int. Symp. on Power Semiconductor Devices and ICs (ISPSD), Vienna, Austria, Sep 13-18, 2020.