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Scientific Research
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Robust single modified divacancy color centers in 4H-SiC under resonant excitation.[J].Nature Communications,2024,
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Enhanced and directional fluorescence emission regulated by dual resonant surface modes.[J].Optics Letters,2025,
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Defect Engineering in Multilayer h-BN Based RRAM by Localized Helium Ion Irradiation.[J].IEEE Electron Device Letters,2024,
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Helium Ion-Assisted Wet Etching of Silicon Carbide with Extremely Low Roughness for High-Quality Nanofabrication..[J].Small Methods,2024,8(5):2301364.
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Enhancement of silicon sub-bandgap photodetection by helium-ion implantation.[J].Frontiers of Optoelectronics,2023,
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Versatile Approach of Silicon Nanofabrication without Resists: Helium Ion-Bombardment Enhanced Etching..[J].Nanomaterials,2022,12(19):3269.
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一种具有可控倾斜角的原子力显微镜探针的制造方法,202010935741.4,
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一种用于氦离子显微镜成像质量校正的样品,202120479255.6,
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一种自封闭纳米流道的制造方法,202210365627.1,
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一种亚10nm间隙纳米电极对及其制备方法,202211060212.X,
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一种样品结构,201922216397.9,
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Wen Xiaolei ,wangpei,Douguo Zhang,luyonghua,minghai,表面增强拉曼散射基底,201220016722.2,2013/01/30,2013/01/30.
