26. (invited) S. Yang*, S. Han, K. Sheng, and K. J. Chen,"Dynamic on-resistance in GaN power devices: Mechanisms, characterizations and modeling," IEEE J. Emerg. Sel. Topics Power Electron., vol. 7, no. 3, pp. 1425-1439, Sep. 2019
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论文类型：期刊论文
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上一条： 25. S. Li, S. Yang*, S. Han, K. Sheng, "Investigation of Temperature-Dependent Dynamic RON of GaN HEMT with Hybrid-Drain under Hard and Soft Switching," 32th Int. Symp. on Power Semiconductor Devices and ICs (ISPSD), Vienna, Austria, Sep 13-18, 2020
下一条： 27. Y. Liu, S. Yang*, S. Han, and K. Sheng, "Investigation of surge current capability of GaN E-HEMTs in the third quadrant: the impact of p-GaN contact," IEEE J. Emerg. Sel. Topics Power Electron., vol. 7, no. 3, pp. 1465-1474, Sep. 2019