6. (invited) S. Yang*, S. Han, K. Sheng, and K. J. Chen,"Dynamic on-resistance in GaN power devices: Mechanisms, characterizations and modeling," IEEE J. Emerg. Sel. Topics Power Electron., vol. 7, no. 3, pp. 1425-1439, Sep. 2019
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上一条： 5. S. Han, S. Yang*, and K. Sheng,"Conductivity modulation in vertical GaN PiN diode: Evidence and impact," IEEE Electron Device Lett., Vol. 42, no. 3, pp.300-303, Mar. 2021. (Featured in CompoundSemiconductor)
下一条： 7. S. Han, S. Yang*, and K. Sheng, "Fluorine-implanted termination for vertical GaN Schottky rectifier with high blocking voltage and low forward voltage drop," IEEE Electron Device Lett., vol. 40, no. 7, pp. 1040–1043, Jul. 2019