- 1. C. Chu, J. Du, X. Yu, L. Jiang, Z. Wang, X. Xie, K. Tan, C. Zhao, Xi. Tang*, S. Long and S. Yang*, "Demonstration of Complementary Power Circuit With Normally-Off Diamond P-FET and GaN N-FET," 2025 IEEE International Electron Devices Meeting (IEDM), San Francisco, USA, 2025, pp. 26.8.1..
- 2. Z. Han, S. Yang*, M. Wang, C. Chu and S. Long, "Achieving 205 cm2V-1s-1 Inversion Channel Mobility in 1.4 kV Vertical GaN-on-GaN MISFET with Nitride Gate Dielectric," 2024 IEEE International Electron Devices Meeting (IEDM), p. 40.2.1, Dec. 2024 (Featured in Compound Semiconductor).
- 3. X. Xie, S. Yu, X. Tang, R. Chen, G. Xu, S. Long, S. Yang*, "kV-Class Vertical GaN PiN Diode Under Proton Irradiation: Impact on Conductivity Modulation," IEEE Electron Device Lett., vol. 46, no. 3, pp. 353-356, Mar 2025..
- 4. J. Du, C. Sun, Q. Tang, B. Jang, Z. Dong, X. Wu, S. Yang*, "An Efficient Switching Transient Analytical Model for P-GaN Gate HEMTs With Dynamic CG(VDS, VGS)," IEEE Trans. Power Electron., vol. 40, no. 1, pp. 2139-2148, Jan. 2025.
- 5. J. Du, H. Lin, D. Hou, S. Long, S. Yang*, "Ultrafast junction temperature mapping during surge current transient and thermal management in vertical GaN PiN diode," 37th IEEE Int. Symp. on Power Semiconductor Devices and ICs (ISPSD), 2025 (功率半导体领域顶级会议).
- 6. X. Xie, M. Wang, Z. Wang, Z. Wang, C. Chu, G. Xu, S. Long, S. Yang*, "Enhanced Single-Event Hardness in GaN-on-Si HEMT With Gate-Junction Termination Extension," 37th Int. Symp. on Power Semiconductor Devices and ICs (ISPSD), Kumamoto, Japan, Jun 1-5, 2025..
- 7. Z. Han, H. Zhang, S. Long, S. Yang*, "Low On-Resistance Vertical GaN-on-GaN Trench MIS-FET with Small Temperature Dependence," 37th IEEE Int. Symp. on Power Semiconductor Devices and ICs (ISPSD), 2025.
- 8. J. Du, S. Yang*, X. Xie, Z. Han, G. Xu and S. Long, "Time-/Current-Dependent Surge Current Capability of Fully-Vertical GaN-on-GaN PiN Diode With Conductivity Modulation," IEEE J. Emerg. Sel. Topics Power Electron., vol. 12, no. 6, pp. 5884-5891, Dec. 2024. (Featured in Compound Semiconductor).
- 9. S. Dai, C. Chu, S. Yu, B. J. Ye, X. Wang, S. Yang*, F. C. Ling*, G. Yang*, "Demonstration of AlXGa1-XN solar-blind UV phototransistor with double heterostructures and winding gate," IEEE Trans. Electron Devices, 2025.
- 10. K. Tan, M. Luo, J. Jiang, X. Tang*, S. Yang, C. Hu, W. Cao*, "Impact of Structural Variation in SiC MOSFETs on TSEP Performances for Temperature Estimation," IEEE Trans. Electron Devices, 2025.