- 1. C. Chu, J. Du, X. Yu, L. Jiang, Z. Wang, X. Xie, K. Tan, C. Zhao, X. Tang*, S. Long and S. Yang*, "Demonstration of Complementary Power Circuit With Normally-Off Diamond P-FET and GaN N-FET," 2025 IEEE International Electron Devices Meeting (IEDM), p. 26.8.1, Dec. 2025 (Featured in Compound Semiconductor).
- 2. Z. Han, S. Yang*, M. Wang, C. Chu and S. Long, "Achieving 205 cm2V-1s-1 Inversion Channel Mobility in 1.4 kV Vertical GaN-on-GaN MISFET with Nitride Gate Dielectric," 2024 IEEE International Electron Devices Meeting (IEDM), p. 40.2.1, Dec. 2024 (Featured in Compound Semiconductor).
- 3. X. Xie, S. Yu, X. Tang, R. Chen, G. Xu, S. Long, S. Yang*, "kV-Class Vertical GaN PiN Diode Under Proton Irradiation: Impact on Conductivity Modulation," IEEE Electron Device Lett., vol. 46, no. 3, pp. 353-356, Mar. 2025.
- 4. J. Du, C. Sun, Q. Tang, B. Jang, Z. Dong, X. Wu, S. Yang*, "An Efficient Switching Transient Analytical Model for P-GaN Gate HEMTs With Dynamic CG(VDS, VGS)," IEEE Trans. Power Electron., vol. 40, no. 1, pp. 2139-2148, Jan. 2025.
- 5. Z. Wang, X. Xie, Z. Wang, M. Wang, C. Chu, Z. Han, Q. Tang, X. Bian, S. Long, B. Shen and S. Yang*, "Single-Event Hardened P-GaN Gate HEMT With Schottky Source Structure,” IEEE Trans. Electron Devices, early access, doi: 10.1109/TED.2026.3670349.
- 6. X. Bian, S. Yu, X. Liu, X. Tang*, S. Long and S. Yang*, "AlGaN/GaN Double-Channel Ultraviolet Photodetector With Polarization-Enhanced Photoresponsivity," IEEE Electron Device Lett., vol. 46, no. 7, pp. 1135-1138, July 2025..
- 7. X. Xie, M. Wang, Z. Wang, Z. Wang, Y. Zhang, Q. Tang, C. Chu, G. Xu, S. Long, B. Shen and S. Yang*, "450 V/18 mΩ Radiation Hardened P-GaN Gate HEMT With Single-Event Hardness at 82 MeV·cm2/mg," 38th IEEE Int. Symp. on Power Semiconductor Devices and ICs (ISPSD), 2026. (功率半导体领域顶级会议).
- 8. C. Chu, X. Xie, J. Wang, Z. Wang, M. Wang, H. Zhang, X. Tang*, S. Long and S. Yang*, "γ-Ray Irradiation-Induced Dynamic Ron Degradation in P-GaN Gate HEMT: Role of Surface Trapping," 38th IEEE Int. Symp. on Power Semiconductor Devices and ICs (ISPSD), 2026.
- 9. J. Du, H. Lin, D. Hou, S. Long, S. Yang*, "Ultrafast junction temperature mapping during surge current transient and thermal management in vertical GaN PiN diode," 37th IEEE Int. Symp. on Power Semiconductor Devices and ICs (ISPSD), 2025.
- 10. X. Xie, M. Wang, Z. Wang, Z. Wang, C. Chu, G. Xu, S. Long, S. Yang*, "Enhanced Single-Event Hardness in GaN-on-Si HEMT With Gate-Junction Termination Extension," 37th Int. Symp. on Power Semiconductor Devices and ICs (ISPSD), 2025.