4. J. Du, C. Sun, Q. Tang, B. Jang, Z. Dong, X. Wu, S. Yang*, "An Efficient Switching Transient Analytical Model for P-GaN Gate HEMTs With Dynamic CG(VDS, VGS)," IEEE Trans. Power Electron., vol. 40, no. 1, pp. 2139-2148, Jan. 2025
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上一条： 3. X. Xie, S. Yu, X. Tang, R. Chen, G. Xu, S. Long, S. Yang*, "kV-Class Vertical GaN PiN Diode Under Proton Irradiation: Impact on Conductivity Modulation," IEEE Electron Device Lett., vol. 46, no. 3, pp. 353-356, Mar. 2025
下一条： 5. Z. Wang, X. Xie, Z. Wang, M. Wang, C. Chu, Z. Han, Q. Tang, X. Bian, S. Long, B. Shen and S. Yang*, "Single-Event Hardened P-GaN Gate HEMT With Schottky Source Structure,” IEEE Trans. Electron Devices, early access, doi: 10.1109/TED.2026.3670349